| Manual Dicing Saw | Operator-guided, water-cooled diamond blade | Silicon wafers, glass, ceramics, quartz, sapphire, compound semiconductor substrates and small packaged parts | Small samples to approximately 150–200 mm substrates, depending on the worktable and chuck | Approximately 30–300 µm, depending on blade thickness, material and cutting conditions | Low; appropriate for laboratory work, prototypes and occasional production | Low initial investment, simple operation, flexible fixture options and convenient process development | Dependent on operator skill; lower repeatability, limited automation and higher variation in alignment and yield |
| Semi-Automatic Blade Dicer | Programmable X-Y positioning with operator-assisted loading and unloading | Silicon, glass, ceramics, LTCC, LEDs, sensors, electronic packages and other brittle substrates | Commonly 100–200 mm wafers or panels; some configurations support larger workpieces | Approximately 20–200 µm with suitable precision blades | Low to medium; suitable for pilot lines and flexible batch production | Better alignment and repeatability than manual systems, moderate cost and adaptable to varied products | Requires operator intervention; wafer handling, inspection and process monitoring may remain partly manual |
| Fully Automatic Blade Dicer | Computer-controlled diamond blade with automatic alignment, cutting and workpiece handling | Silicon wafers, compound semiconductors, ceramic substrates, glass, MEMS structures and advanced packages | Typically 150–300 mm wafers; platform capacity varies by machine configuration | Approximately 15–150 µm, subject to blade specification and material properties | Medium to high; designed for repeatable production batches and integrated manufacturing lines | High positional accuracy, recipe control, reduced labor input, automated inspection options and consistent process conditions | Higher purchase and maintenance cost; requires qualified setup, utilities, fixturing and process engineering |
| Ultra-Thin Blade Dicer | High-speed spindle using a thin diamond blade and precision coolant delivery | Silicon, glass, ceramic, sapphire and other materials where material loss must be minimized | Usually 100–300 mm wafers or precision substrates | Approximately 10–80 µm, depending on blade construction and process stability | Medium to high for narrow streets and high part counts | Low material waste, narrow streets, efficient use of wafer area and suitability for small dies | More sensitive to blade wear, vibration, spindle condition, coolant quality and workpiece thickness variation |
| Laser Dicing Machine | Focused pulsed or continuous laser beam for ablation, thermal separation or groove formation | Silicon, glass, ceramics, sapphire, polymers, thin films and selected compound semiconductor materials | Commonly 100–300 mm wafers and precision panels, depending on optical travel and workholding | Approximately 5–50 µm for the laser interaction zone; the effective separation width depends on the process | Medium to high; strongly dependent on material absorption, thickness, laser power and cut strategy | No mechanical blade contact, narrow cuts, low cutting force and capability for some delicate or multilayer structures | Potential heat-affected zone, debris or redeposition; higher optical-system cost and material-specific process development |
| Stealth Dicing System | Laser-induced internal modification followed by expansion or controlled breaking | Selected transparent or semi-transparent materials, including silicon, glass and some crystalline substrates | Often 150–300 mm wafers or panels, subject to material transparency and equipment design | Very narrow surface opening; the internal modified layer is typically designed to remain within the intended street | Medium to high after recipe optimization; suitable for high die counts and low-chipping requirements | Low surface chipping, minimal kerf loss and reduced mechanical contact during the separation stage | Material and wavelength dependent; unsuitable for many opaque or highly absorbing materials and requires precise separation control |
| Plasma Dicing System | Dry plasma etching along patterned streets, normally after suitable masking and process preparation | Primarily semiconductor wafers and selected thin-film or microfabricated structures compatible with plasma chemistry | Commonly 200–300 mm wafers in semiconductor manufacturing environments | Typically defined by the street layout and etch profile; can achieve very narrow separation lanes with optimized processes | High in dedicated, stable production flows; less suitable for frequent product changes | Low mechanical stress, no blade wear, good compatibility with fragile structures and potential for narrow streets | Requires vacuum equipment, masks, gas systems and process expertise; higher facility and qualification requirements |
| Ultrasonic or Assisted Dicing System | Diamond blade cutting enhanced by ultrasonic vibration or another controlled assistance method | Hard, brittle and difficult-to-machine materials such as ceramics, glass, sapphire and selected crystals | Small parts to wafer-scale substrates, depending on the fixture and travel range | Approximately 30–200 µm, depending on blade and workpiece properties | Low to medium; commonly selected for challenging materials rather than maximum volume | Can reduce cutting force, improve edge quality and support materials that are difficult to process with conventional sawing | Additional system complexity, specialized tooling and possible limitations in cycle time and maintenance |